| 摘要 |
PURPOSE:To obtain through CZ process a Sb-doped silicon single crystal with uniform required oxygen concentration in the direction of crystal growth by increasing the output of a heater located under a crucible toward the end of the single crystal growth compared to its initial stage. CONSTITUTION:A crucible 2 is placed at the center of the inside of a chamber 1, a cylindrical side heater 3 is located on the side of the crucible 2, and a ring-shaped bottom heater 4 is located under the crucible 2. Thence, the crucible 2 is charged with a raw material (e.g. polycrystalline silicon), which is then heated by both the heaters 3 and 4 and melted. Sb is subsequently doped into the melt, and a seed crystal 8 is added to the resulting melt 6 and pulled up to effect growth of a Sb-doped single crystal 9. In this case, by increasing the output of the bottom heater 4 toward the end of the growth of the single crystal compared to its initial stage, the objective single crystal 9 with uniform oxygen concentration in the direction of crystal growth can be produced. |
