发明名称 PATTERN FORMATION METHOD
摘要 PURPOSE:To form a resist pattern including the section above a step part with high accuracy by exposing the required pattern all over the surface under the condition that the resist film on the substrate excluding the step part is exposed properly, and next exposing the pattern part hanging over the step part and its vicinity by a quantity of exposure corresponding to the under exposure. CONSTITUTION:A resist film 3 is made to be as thick as or less than the height of a step by spin-off method on the substrate 1 which has the step, and a required pattern 6 is exposed all over the whole surface under the condition that the resist film 3 on the substrate 1 excluding the step part is exposed properly. With this first exposure, the quantity of exposure is insufficient to the part 3b where the resist film 3 is thick at the step part. Next, with the quantity of exposure corresponding to this under exposure, the second exposure is applied to the pattern part hanging over the step part and the resist film 3 in the vicinity of this pattern part. Hereby, the step part where the resist film 3 is made thick is also removed completely, and the resist film pattern 8 including the section above the step part can be made with high accuracy.
申请公布号 JPH03261126(A) 申请公布日期 1991.11.21
申请号 JP19900058036 申请日期 1990.03.12
申请人 NIPPON MINING CO LTD 发明人 SHIMOYAMA TOSHIFUMI
分类号 C23F1/00;G03F7/20;H01L21/027;H01L21/338;H01L29/812;H05K3/06 主分类号 C23F1/00
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