| 摘要 |
<p>An MOS thin film transistor comprises a semiconductor thin film (3) formed over a substrate (1) and having drain and source regions each of a first conductivity type and a channel region of another conductivity type defined between the drain and source regions, an insulating layer (4) formed over the channel region, at least one gate electrode (6) formed over the insulating layer (4), and drain and source electrodes (8,7) connected to the drain and source regions of the semiconductor thin film (3). The source and drain regions are formed in a self-aligned manner with the source region adjoining the channel region and a drain-offset region being defined between the channel region and the drain region, this construction resulting in a relatively low drain-gate electric field with consequent leakage and OFF current reduction. <IMAGE></p> |
