| 发明名称 |
Blanking aperture array and method of producing same. |
| 摘要 |
<p>The array is intended to be used in an electron beam exposure system and is obtained by forming an electrode layer (34) on a substrate (20) having shift register devices (24). An electron beam aperture (38) is formed in a same position through the substrate and electrode layer, so as to effectively form deep electron beam apertures. <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP0457632(A2) |
申请公布日期 |
1991.11.21 |
| 申请号 |
EP19910401008 |
申请日期 |
1991.04.16 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TAKAHASHI, YASUSHI;SAITO, TOMIYASU |
| 分类号 |
H01L21/027;H01J37/04;H01J37/317;H01L21/30 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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