| 摘要 |
PURPOSE:To form fine patterns by developing an upper layer resist by the down flow of the plasma of gas to obtain the upper layer pattern and executing dry etching with this pattern as a mask, thereby transferring the upper layer pattern to the lower layer pattern. CONSTITUTION:Azide contg. an arom. ring is added to a polymer consisting of butadiene to obtain the resist. This resist is applied on the lower layer resist to form the two-layered structure resists. The resists are further subjected to selective exposing to bring azide and polybutadiene into reaction. Heating under a reduced pressure is then executed to evaporate away the unreacted azide. The upper layer resist is developed by the down flow of the plasma to obtain the upper layer pattern. The dry etching is executed with this upper layer pattern as the mask to transfer the upper layer pattern to the lower layer. The resist patterns which are free from the evaporation of the low mol. wt. components at the time of the exposing is formed in this way. The formation of the sub mum patterns is possible. |
