| 摘要 |
PURPOSE:To enable a semiconductor element to be sharply improved in characteristics and service life by a method wherein a junction is formed of a combination of materials where an electrical double layer is induced owing to the storage of carriers when a voltage is applied. CONSTITUTION:In a junction composed of an organic layer (O) 12 and an N-type semiconductor substrate (S) 11, a barrier (DELTAEc=Ecs-Eco) is built in a conduction band to the injection of electrons to the organic layer 12 from the N-type semiconductor 11, and a barrier (A Ev= Evs-Evo is formed in a valence band to the injection of holes to the N-type semiconductor substrate 11 from the organic layer 12. A junction where holes are easily injected to the organic layer 12 from a metal electrode 13 is formed between the metal electrode (M) 13 and the organic layer (O) 12. When a positive voltage V is applied to the metal electrode 13 of this light emitting element, holes injected to the organic layer 12 from the metal electrode 13 are stored at the junction interface between the organic layer 12 and the semiconductor substrate 11 and electrons in the semiconductor substrate 11 are stored at the junction interface between the organic layer 12 and the semiconductor substrate 11, so that an electrical double layer is formed. By this setup, the stored carriers are injected into an adjacent layer easily tunneling through a barrier. Holes injected into the N-type semiconductor substrate 11 are recombined with electrons as a majority carrier there to emit light. |
