| 摘要 |
<p>A TFTs fabricating process practicable at a low temperature, the steps of forming a multi-layer body on a substrate (1), the multi-layer body including a semiconductor layer (2) a gate insulating layer (3) and a lower thin layer (2a), patterning the multilayer body into islands, thereby removing the other portions of the multi-layer body, forming an insulating layer (5) on the sides of the island-patterned multi-layered portion by etching at a selective ratio between the constituents of the insulating layer and the lower thin layer, forming an upper thin layer (4b), and etching the upper and lower thin layers into upper and lower gate electrodes by use of one resist pattern. <IMAGE></p> |
