| 摘要 |
A semiconductor memory cell having: a semiconductor substrate (1) of a first conductivity type; a source region (2) and a drain region (3) formed on the surface of the semiconductor substrate, with a channel region (ch) being interposed therebetween; a floating gate (5) formed above a first region (WA) of the channel region (ch) near the drain region, with a first insulating film (4) being interposed between the floating gate and the channel region; a first control gate (7) formed above the floating gate (5), with a second insulating film (6) being interposed therebetween; and a second control gate (7a) formed above a second region (RA) of the channel region (ch) near the source region (2), with a third insulating film (8) being interposed between the second control gate and the channel region, the second control gate (7a) being electrically conductive with the first control gate (7), the first region (WA) of the channel region (ch) being made a layer of a second conductivity type, and the second region (RA) being made a layer of the first conductivity type. <IMAGE> |
