| 摘要 |
PURPOSE: To remove a filament, without undercutting masked interconnecting material by covering a part of conductive titanium compound with photoresist, exposing a substrate to chlorine containing agent in a plasma reactor, and etching the conductive titanium compound from a conductor and dielectric material, which are not covered with the photoresist. CONSTITUTION: A layer 43, containing conductive titanium compound in contact with conductors 30 and 42 and dielectric materials 14 and 16, is formed. A part of the titanium compound 43 is covered with a photoresist 46. Furthermore, a part of the titanium compound 43 is mounted on a step not covered with the photoresist 46. Then a substrate is exposed to chlorine-holding agent in a plasma reactor. The conductive titanium compound 43 is etched from the positions of the conductors 30 and 42 and the dielectric materials 14 and 16, which are not covered with the photoresist. Thus, the filament of the titanium nitride can be removed without undercutting the part masked by the photoresist. |
