发明名称 RESISTIVE FIELD SHIELDS FOR HIGH VOLTAGE DEVICES
摘要 IMPROVED RESISTIVE FIELD SHIELDS FOR HIGH VOLTAGE DEVICES A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device.
申请公布号 CA1292327(C) 申请公布日期 1991.11.19
申请号 CA19880580461 申请日期 1988.10.18
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY 发明人 KNOLLE, WILLIAM R.;OSENBACH, JOHN W.
分类号 H01L21/318;H01L23/64;H01L29/06;H01L29/40 主分类号 H01L21/318
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