发明名称 |
RESISTIVE FIELD SHIELDS FOR HIGH VOLTAGE DEVICES |
摘要 |
IMPROVED RESISTIVE FIELD SHIELDS FOR HIGH VOLTAGE DEVICES A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device. |
申请公布号 |
CA1292327(C) |
申请公布日期 |
1991.11.19 |
申请号 |
CA19880580461 |
申请日期 |
1988.10.18 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
KNOLLE, WILLIAM R.;OSENBACH, JOHN W. |
分类号 |
H01L21/318;H01L23/64;H01L29/06;H01L29/40 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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