| 摘要 |
<p>PURPOSE:To prevent the surface of metal from being contaminated by carrying out the plasma anodic oxidation of the metal surface with activated particles generated in plasma gas incorporating at least nitrogen and oxygen. CONSTITUTION:A container 1 is evacuated, then the mixed gaseous nitrogen and oxygen is admitted through an intake 10 in the control of a coupled mass flow controller, and a vacuum is produced. In this state, an electrode 4 is supplied with high frequency electric power from a high frequency power source 7 to cause plasma discharge. Then the tantalum part of a substrate 3 is applied with a bias voltage by a DC power source 5 to perform the plasma anodic oxidation, thereby forming a tantalum oxide insulating film incorporating hydrogen atoms. Consequently, the insulating film which is hundreds of Angstrom thickness can be formed at low temperature with good controllability and problems such as surface contamination, staining in substrate drying, and waste liquid treatment are eliminated.</p> |
