Method of making a DRAM cell with stacked trench capacitor

摘要

A semiconductor device and a manufacturing method therefor are disclosed, the semiconductor device including a field oxide layer selectively formed on a semiconductor substrate for defining an active region; an electrically insulated gate electrode; a source and a drain region; a trench formed in the semiconductor substrate; an impurity-doped region formed at the surface of the trench; a first insulating layer; a second conductive layer; a dielectric film; a third conductive layer; a fourth conductive layer; an etch blocking layer; a fifth conductive layer. The manufacturing method comprises a plurality of processes for forming the above mentioned parts by applying various processes. According to the present invention, as both the impurity-doped polycrystalline silicon layer of the upper portion of the transistor and the inside of the trench including the impurity-doped region are simultaneously used as the first electrode of the capacitor, the surface area of the capacitor electrode can be made larger.