WERKWIJZE VOOR HET VERVAARDIGEN VAN EEN HALFGELEIDERINRICHTING.

摘要

The invention relates to a method of manufacturing a semiconductor device by means of a cyclical epitaxial process from a gas phase by which alternate monoatomic layers of the III atom and the V atom of a III-V compound are formed. Layers of very good quality are obtained when atomic hydrogen is conducted to the substrate on which epitaxial growth takes place during a part of each cycle in which the gas phase is free from a compound of the III atom.