| 摘要 |
PURPOSE:To realize a high frequency semiconductor device operated stably in which the operating frequency is increased and high frequency semiconductor elements are isolated by removing part of a barrier and providing an isolation resistor to the removed part. CONSTITUTION:Most of a high frequency semiconductor amplification section whose matching circuits 5a, 5b are connected to the input and output of high frequency semiconductor elements 3a, 3b is divided into two by a barrier 8. Moreover, the high frequency semiconductor elements 3a, 3b are connected by being bonded to an isolation resistance 10 provided to a removed part of the barrier 8 by means of a gold wire 9. Thus, the operating frequency of the high frequency semiconductor elements 3a, 3b is increased, the high frequency semiconductor elements is taken to prevent the loop oscillation and a high frequency semiconductor amplifying microwave power is stably realized. |
