| 摘要 |
PURPOSE:To achieve a high-speed light response with large light non-linear characteristics even at room temperature by doping a donor to a first semiconductor which is an electron-confinement layer and by doping an acceptor to a second semiconductor which is a positive hole confinement layer. CONSTITUTION:An InP buffer layer 22 is laminated on a semi-insulation InP substrate 21 by the gas source molecular rays epitaxy method and In0.53Ga0.47As layer 23 which is doped with Si and GaAs0.5Sb0.5 layer 24 which is doped with Be are alternately laminated periodically, and then an InP cap layer 25 is laminated. In this lamination structure, the InGaAs layer is an electron confinement layer and the GaAsSb layer 24 is the positive hole confinement layer. A band discontinuity value of a conduction band is approximately 0.42eV, that of a valence electron band is approximately 0.26eV, and an energy difference between the conduction band of the InGaAs layer and the valence electron band of the GaAsSb layer is approximately 0.5ev. As a result of measurement of a light-transmission spectrum of this lamination structure, increasing incident light strength causes a great absorption saturation to be observed near an absorption edge. |
