| 摘要 |
PURPOSE:To make a recombination current value approximately constant in a voltage region higher than a pinch off voltage (Vp) by providing metal having high phiR to a bottom section and a side of a recessed section of an irregular semiconductor surface and by providing metal having low phi to an approximately planar surface of the upper part of a projecting section. CONSTITUTION:When a backward voltage is applied, a recombination current in a depletion layer extending from a junction formed by a metal 2 occupies a large part of a backward current until a depletion layer (i) spreading from a metal 1 fills a width (a) of a projecting section. Electric field E applied to a Schottky barrier junction formed by the metal 2 is almost fixed from VP and a depletion layer (ii) wherein the width (a) of the projecting section is buried by a depletion layer which extends from a junction of the metal 1. If a voltage is further applied after VP, a recombination current between a depletion layer (iii) which extends from the metal 1 until a breakdown voltage VR and a delpletion layer formed by a metal having a large phiB value becomes a relatively small leak current value. |
