| 摘要 |
PURPOSE:To improve integration of a semiconductor device having a plurality of FETs by providing a plurality of regions constituting a source or a drain, by forming a gate electrode enclosing the regions and by forming an element region excepting the plurality of regions as the drain or the source. CONSTITUTION:Each of source regions 13 is formed in an element region enclosed part which is acquired by bending a gate electrode 12 in the same direction twice and by extending both ends to a field region end 10A. In other words, the source region 13 is enclosed with a gate electrode 12 to position in a part of a element region. Thereby, source regions 13 of an MOSFET Q10 and Q12 are separated each other. A drain region 14 is formed in the element region excepting the enclosed part and shared by the MOSFETs Q10 and Q12. MOSFETs Q10 and Q12 which are separated each other are acquired by sharing the drain region 14 and by forming the source region 13 in an enclosed section in this way. |
