| 摘要 |
PURPOSE:To obtain sufficient capacitor capacity even when an LSI is minimized by providing another charge storage electrode so as to come in contact with one part on the charge storage electrode and to be vertical to a board in order to gain a capacitor area on its sidewall part. CONSTITUTION:After implanting an impurity 14 into the surface area excepting gate electrodes 10 and separation regions 5 while all over depositing a nitriding film 15, the nitriding film 15 is left on a region excepting either one of both impurity regions of the gate electrodes 10, polycrystalline silicon 16 and an interlayer insulating film 17 are deposited all over a board 1 so as to come in contact with at least one part of the impurity regions of both sides of the gate electrodes 10. Next, after leaving the interlayer insulating film 17, further removing a resist 18, further polycrystal line silicon 19 is all over deposited and anisotropic etching is all over performed with no resist mask so as to leave polysilicon 19 on the sidewall of the interlayer insulating film 17. Later, the interlayer insulating film 17 is removed to all over form a dielectric film consisting of a nitriding film 20 and an oxide film 21 and to all over deposit a polycrystalline silicon film 22 to be made a capacitor. |
