| 摘要 |
PURPOSE:To obtain a resist pattern with a section of an inverse trapezoid by applying a novolac photo resist to a substrate, retaining it within a high vacuum before exposure, performing pattern exposure by light or electron beam, and then performing development. CONSTITUTION:First, a novolac positive type photo resist is uniformly applied to a substrate 1 which consists of a silicon wafer, etc., heating/drying treatment is performed, and then a resist film 2 is formed. Then, it is retained within vacuum, water contents are removed from a surface of the resist film 2, and a solution retardant layer 6 is formed on a surface of the resist film 2. Then, a desired pattern is drawn on the resist film 2 by an exposure beam 3. In this case, an indene ketene is produced within the resist film 2 and a reaction for enabling indene carbon acid to be produced advances through water. Since water contents are reduced on a surface layer of the resist film 2 due to retention of vacuum in the above, the indene carbon acid is hard to be produced. Therefore, by performing alkali development for photo resist, a resist pattern with an inverse trapezoid section can be formed due to difference in solubility between an upper layer and a lower layer of the resist film 2. |
