| 摘要 |
A method of manufacturing a heterojunction bipolar transistor is disclosed. On a base layer of a first semiconductor which contains at least one of gallium and arsenic as a constituent element, an emitter layer of a second semiconductor which contains at least one of gallium and arsenic as a constituent element and which has a band gap larger than that of the first semiconductor is formed. predetermined regions of the emitter layer and an upper portion of the base layer is removed to obtain a mesa structure. Then, a surface of a junction region of the base layer and the emitter layer which is exposed of the edge of the mesa structure by using sulfide. After the surface passivation, the surface of the junction region is covered with an insulating film. |
