| 摘要 |
PURPOSE:To obtain light-emitting diodes whose light-emitting efficiency is high and which are operated stably and to obtain their array by a method wherein a non-alloyed region situated so as to correspond to the position of a second electrode and an alloyed region adjacent to the non-alloyed region are formed at boundary between a first semiconductor layer and a first electrode so that the density of an electric current flowing to a p-n junction region not situated directly under an electrode of a light-emitting diode is larger than the density of an electric current flowing to a p-n junction directly under the electrode. CONSTITUTION:P-electrodes 18 are formed on the surface of Zn diffusion regions 16; a wafer is heated as a whole and alloyed; after that, an n-electrode 20 is formed on the rear surface of an N-GaAs substrate 10. After that, a laser beam having a wavelength which is not absorbed by the Zn diffusion regions 16, an SiN film 14, an n-GaAsP layer 12 and the n-GaAs substrate 10 is irradiated from the side of the p-electrodes 18. Thereby, since only parts of the n-electrode 20 not masked with the p-electrodes 18 absorb the laser beam and are heated, boundary between the n-GaAs substrate 10 and the n-electrode 20 is alloyed selectively in a self-aligned manner, and alloyed regions 22 and non-alloyed regions 24 are formed. |
