| 摘要 |
PURPOSE:To make it possible to obtain a resist pattern having high contrast by a simple process by a method wherein, after a prescribed pattern is transferred and exposed on the main surface of a photoresist-coated substrate, the parallel beams of ultraviolet rays having the prescribed incidence angle are made to irradiate on the whole main surface of the substrate while the substrate is being heated, and then a developing process is conducted. CONSTITUTION:After a photoresist film 2 of 1mum in thickness has been formed on the surface of a substrate 1, a latent image 3 is formed after a pattern has been transformed and exposed. A positive type resist of novolak resin is used as a photoresist. Then, the substrate 1 is fixed on a hot plate which is heated up to 100 deg.C, the substrate 1 is heated up, and the ultraviolet rays 5 of 365nm in wavelength are made to irradiate on the photoresist film 2 at an incidence angle 6 of 75 deg.C against the normal line of the surface of the substrate. Besides, a paddle developing operation is conducted on the photoresist film 2 using a TMAH alkali developing solution, and a resist pattern 7 is formed. |
