CRYSTAL GROWTH METHOD FOR INP LAYER ON GAAS SUBSTRATE,申请号JP19900054010-传众专利搜索

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发明名称	CRYSTAL GROWTH METHOD FOR INP LAYER ON GAAS SUBSTRATE
摘要
申请公布号	JPH03255617(A)	申请公布日期	1991.11.14
申请号	JP19900054010	申请日期	1990.03.05
申请人	MITSUBISHI ELECTRIC CORP	发明人	KIMURA TATSUYA
分类号	H01L21/205;H01L21/20	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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