| 摘要 |
PURPOSE:To obtain a photoconductive member stable in electrical, optical, and photoconductive characteristics, and long in service life, by providing a specified interlayer between a substrate and a photoconductive layer made of a halogen-containing amorphous silicon (a-Si:X). CONSTITUTION:An interlayer is composed of a nonphotoconductive amorphous material a-(SixN1-x)y:H1-y consisting of the matrix of silicon and 25-55 atomic % nitrogen, and 2-35 atomic % hydrogen. A photoconductive member is prepared by forming said 30-1,000 Angstrom thick interlayer 102 made of a-(SxN1-x)y:H1-y on the substrate 101, such as a metallic plate or a plastic film subjected to conductivityenhancing treatment, and further a photoconductive layer 103 having >=5X10<9> ohm.cm dark resistivity made of a-Si:X on the layer 102. |
