| 摘要 |
PURPOSE:To reduce the transposition density and the grating constant of an epitaxially grown layer by a method wherein a second crystal substrate, having different values of grating constant and thermal expansion coefficient of a first crystal substrate, is formed on the first crystal substrate, and a part of boundary surface of the first and the second crystal substrates is removed. CONSTITUTION:For example, a GaAs epitaxial layer 3 is formed on an Si semiconductor crystal substrate 1. A selective etching layer 2 of Al0.7Ga0.3As, for example, on which epitaxial growth can be performed between GaAs and also selective etching can be conducted against GaAs, is formed thereon. A GaAs semiconductor crystal substrate layer 3, which becomes a second crystal substrate, is epitaxially grown on the above-mentioned layer 2. Then, after a cut groove 4, reaching the selective etching layer 2, has been formed by etching from the surface of the GaAs semiconductor crystal substrate layer 3 leaving the prescribed area, a part of the Al0.7Ga0.3As selective etching layer 2 only is removed by etching using an AlGaAs selective etchant utilizing the cut groove 4, and a GaAs semiconductor substrate layer 3, which is partially alienated from the Si semiconductor crystal substrate, can be obtained. |
