| 摘要 |
<p>An automatic manufacturing apparatus processes a substrate (14) having etched patterns to be filled with metallization. The system automatically loads the substrate into the chamber, then loads the substrate onto a chuck, evacuates gases from the chamber, plasma etches the substrate, deposits an adhesion layer on the substrate and deposits nucleation seeds onto the substrate subsequent to evacuation of gases from the chamber. A reactor (11), adjacent to the chamber, carries a sublimable precursor (10) of the metal. A heat transfer system (25, 52, 56) for the reactor (11) provides selective cooling and heating of the reactor (11) above and below the sublimation temperature of the precursor (10) with the heating occuring for a predetermined period of sublimation time under the control of a means for timing. The reactor (11) is selectively connected to the chamber (24) to transport sublimated gases into the chamber (24). The chuck is heated to heat the substrate above the dissociation temperature of the precursor releasing the metal from the precursor onto the substrate to nucleate the metal species in the seed locations on the substrate. Then the system is pumped to a lower pressure subsequent to expiration of each predetermined period of sublimation time, and the substrate (14) is unloaded from the chuck (15) and the chamber (24) subsequently.</p> |
