发明名称 Monolithically integrated semiconductor optical preamplifier.
摘要 <p>An optical preamplifier includes a semiconductor optical amplifier (23) monolithically integrated with an optical detector (21) and electrically isolated from the detector (21) by an isolation region (22). The isolation region (22) consists of a low-loss, preferably transparent, insulating material whose index of refraction is matched to at least the refractive index of the amplifier (23), leading to reduced facet reflectivity at the amplifier output facet. Alternative device structures may include a waveguiding layer in the isolation region, a grating integrated with or following the optical amplifier, and a tuning region positioned between the amplifier and isolation region for filtering spontaneous emission. &lt;IMAGE&gt;</p>
申请公布号 EP0456043(A2) 申请公布日期 1991.11.13
申请号 EP19910106695 申请日期 1991.04.25
申请人 GTE LABORATORIES INCORPORATED 发明人 EICHEN, ELLIOT;HOLMSTROM, ROGER P.;LA COURSE, JOANNE;LAUER, ROBERT B.;POWAZINIK, WILLIAM;RIDEOUT, WILLIAM C.;SCHLAFER, JOHN
分类号 H01S5/00;H01L31/14;H01S5/026;H01S5/50 主分类号 H01S5/00
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