| 发明名称 |
IGBT SEMICONDUCTOR DEVICE WITH HIGH REVERSE BREAKDOWN VOLTAGE AND RELATED MANUFATURING PROCESS |
| 摘要 |
The high reverse breakdown voltage is obtained by modifying the arrangement of the anode junction (11) so that it ends on the upper surface of the chip and that on the edge of that junction (11) there can be applied a passivating layer (15) and, over the latter, a field plate structure (16). <IMAGE> |
| 申请公布号 |
EP0445888(A3) |
申请公布日期 |
1991.11.13 |
| 申请号 |
EP19910200462 |
申请日期 |
1991.03.05 |
| 申请人 |
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
RONSISVALLE, CESARE |
| 分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/739 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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