SEMI-INSULATING GROUP III-V BASED COMPOSITIONS DOPED USING BIS ARENE TITANIUM SOURCES
摘要
Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1 x 107 ohm/cm have been achieved. (FIG. 1).
申请公布号
CA1291926(C)
申请公布日期
1991.11.12
申请号
CA19870554403
申请日期
1987.12.15
申请人
AMERICAN TELEPHONE AND TELEGRAPH COMPANY
发明人
DENTAI, ANDREW G.;ZILKO, JOHN L.;JOYNER, CHARLES H., JR.;WEIDMAN, TIMOTHY W.
