发明名称 |
Metal-to-polysilicon capacitor and method for making the same |
摘要 |
A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the multilevel dielectric is deposited thereover. The multilevel dielectric is removed from the capacitor area, and an oxide/nitride dielectric is deposited over the exposed bottom plate and over the multilevel by way of LPCVD. A first layer of titanium/tungsten is preferably deposited prior to contact etch, and the contacts to moat and unrelated polysilicon are formed. Metallization is sputtered overall, and the metal and titanium/tungsten are cleared to leave the metallization filling the contact holes, and a capacitor having a titanium/tungsten and metal top plate.
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申请公布号 |
US5065220(A) |
申请公布日期 |
1991.11.12 |
申请号 |
US19880189930 |
申请日期 |
1988.05.03 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PATERSON, JAMES L.;TIGELAAR, HOWARD L. |
分类号 |
H01L21/311;H01L21/321;H01L21/768;H01L21/8238;H01L21/8247;H01L27/092;H01L27/105;H01L27/11;(IPC1-7):H01L29/78;H01L27/02;H01L29/34;H01L23/48 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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