| 摘要 |
PURPOSE:To heteroepitaxially grow a III-V compound semiconductor having little dislocation on a dissimilar substrate by a method wherein a face (111) substrate with a step having a slant face, which consists of the face (001) or the face (001) and its vicinity, is used as a substrate. CONSTITUTION:A (111) Si substrate 10 with a step having the face (001) 12 as a slant face is used as an Si substrate. This substrate is performed a thermal cleaning at 980 deg.C for 5 minutes in an arsine (AsH3)-containing atmosphere using hydrogen carrier gas and thereafter, is cooled down and a GaAs buffer layer 13 is first grown in a thickness of 100nm at a growth temperature of 400 deg.C by an MOCVD method. After that, the growth temperature is set to 650 deg.C, a growth of the layer 13 to the transverse direction of a GaAs layer 14 is performed and lastly, after the Si face (111) is all covered with the layer 14, heat cycle annealings of 20 times are performed at 800 deg.C and 200 deg.C. A GaAs layer of a dislocation lower than a conventional dislocation of an etch-pit density of 5X10<15>cm<-3> is obtained. That is, a low-dislocation III-V compound semiconductor, which is grown on a dissimilar substrate, can be obtained. |
