| 摘要 |
PURPOSE:To increase blue light emitting intensity of a light emitting diode by forming a double layer structure of a low carrier concentration layer and a high carrier concentration layer sequentially from the side of connecting an N-type layer to an I-type layer, and forming a double layer structure of a low impurity concentration layer having relatively low concentration of P-type impurity and a high impurity concentration layer having relatively high concentration of P-type impurity sequentially from the side of connecting an I-type layer to an N-type layer. CONSTITUTION:A sapphire board 1 is vapor etched, an AlN buffer layer 2 is formed, a high carrier concentration layer 3 made of GaN is formed, and then an N<+> type low carrier concentration layer 4 made of GaN is formed. Then, a low impurity concentration IL layer 5 of relatively low concentration (5X10<19>/cm<3>) of Zn concentration made of GaN is formed, and then a high impurity concentration IH layer 6 of relatively high concentration (2X10<20>/cm<3>) of Zn concentration made of GaN is formed. |
