| 摘要 |
PURPOSE:To improve photoelectric conversion efficiency by incorporating not only a partial layer having a relatively large optical energy band gap but also a partial layer having a relatively small gap in an intrinsic semiconductor layer. CONSTITUTION:A stainless steel tank is used as a conductive substrate 1, and an n-type amorphous layer 2 is deposited by a glow discharge method by employing silane gas and phosphine gas diluted with hydrogen as material gases. An amorphous silicon-carbon alloy intrinsic layer 3a is deposited, for example, by varying CH4 gas flow rate to SiH4 gas flow rate depending upon the thickness of the growing layer 3a. In this case, not only a partial layer having a relatively large optical band gap but also a partial layer having a relatively small gap are formed on the semiconductor layer. |
