| 摘要 |
<p>PURPOSE:To prevent electrostatic breakage in manufacturing process by removing a semiconductor layer in the same process with the selective removal of a protection film after the protection film is deposited on the surface of a transparent substrate, and disconnecting the short-circuited wiring. CONSTITUTION:Semiconductor layers AS and DO which connect the short- circuited wirings GSW and DSW decrease in resistance value through photoconducting operation when irradiated with light, thereby short-circuiting the short-circuited wirings mutually. Namely, the short-circuit wirings are short- circuited mutually by irradiating the semiconductor layers with the light throughout the process wherein a lower transparent glass substrate SUB1 is taken out of the jig of a CVD device after the protection film PSV1 is deposited by a plasma CVD method which easily generates static electricity in manufacturing the liquid crystal display device. Consequently, an electrostatic breakdown between a scanning signal line and a video signal line, a source electrode or drain electrode and a gate electrode, etc., is precluded.</p> |
