SEMICONDUCTOR DEVICE HAVING MULTI-LAYERED WIRING STRUCTURE

摘要

A semiconductor device comprises a first pad region (upper 11) applied with a first potential (GND), a first line (12) led from the first pad region (upper 11) and connected to a first circuit (13), a second pad region (lower 11) integrated with the first pad region (upper 11) and applied also with the first potential, and a second line (14) led from the second pad region (lower 11) connected to a second circuit (15) and overlapped with the first line (12).