| 摘要 |
An improved ferroelectric, non-volatile memory comprises an array of ferroelectric capacitors with each capacitor connected to one row and one column select line through a network of diodes. The select lines are connected to a power supply or ground to access one of the cells. The diodes are configured to provide a conducting path between a power supply and ground including the accessed cell while isolating all other cells from the power supply and ground.
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