| 摘要 |
PURPOSE:To ensure the less expensive production and improvement of a dielectric constant epsilonr and a quality factor Q of a dielectric porcelain composition for high frequency by adding a total of 0.01 to 1.0wt.% of at least one of Cr2O3, Al2O3 and SiO2 as a sub-component to a specific main component. CONSTITUTION:A total of 0.01 to 1.0wt.% of at least one of Cr2O3, Al2O3 and SiO2 as a sub-component is added to a main component composed of 46 to 58mol% of TiO2, 34 to 44 mol% of ZrO2, 0.5 to 9.0mol% of CeO2 and 0.5 to 9.0mol% of SnO2. Namely, TiO2, ZrO2, CeO2, La2O3 and SnO2 are less expensive, and in any dielectric porcelain composition thereof has a dielectric constant epsilonr equal to or above 35 and a quality factor Q equal to or above 7000. Also, the temperature coefficient tauf at a resonance frequency is as small as within -30 to +30ppm/ deg.C. In addition, the coefficient tauf is made optionally variable within the aforesaid range. According to the aforesaid construction, it is possible to obtain an excellent effect displaying stable temperature characteristics and a large quality factor Q at a high dielectric constant, and consequently to obtain a microwave circuit element such as a dielectric resonator and a dielectric filter in a good condition. |
