| 摘要 |
PURPOSE:To protect an upper electrode layer against disconnection on the side face of a photoelectric conversion layer by a method wherein a base layer is formed on the side face of the photoelectric conversion layer, and the upper electrode layer is formed on the base layer concerned. CONSTITUTION:A base layer 25 of SiO2 is formed on the side face of a photoelectric conversion layer 23, and an upper electrode layer 24 extending onto an insulating substrate 21 from the upside of the photoelectric conversion layer 23 is formed on the base layer 25 at the side face of the photoelectric conversion layer 23. By this constitution, irregularities induced on the side face of the photoelectric conversion layer 23 through etching can be leveled off, therefore the upper electrode layer 24 can be formed extending from the upside of the photoelectric conversion layer 23 to the insulating substrate 21 without being disconnected. |
