| 摘要 |
PURPOSE:To enable an electrode to be enlarged in area by a method wherein a double hetero-interface is formed protrudent in a direction parallel to the surface of a substrate, a light emitting element is made to emit light rays enough in a lateral direction to be high in gain, and the electrode is provided onto a crystal growth surface. CONSTITUTION:An amorphous substrate 1 is made to serve as a non-nucleation surface, a very fine nucleation surface 5 is formed, and a single crystal 2 of III-V compound semiconductor is selectively formed through an MOCVD method or the like and further grown to occupy a enough area. The surface is polished to be a mirror surface, and a double hetero-structure composed of a clad layer 3, an active layer 6, a clad layer 7, and a cap layer 8 is made to grow. An electrode 9 is provided to the surface, and a resist mask is laid on an active region, which is etched up to the halfway point of the clad layer 3. An electrode 4 is provided to a crystal growth surface, the electrode 4 on the active region is lifted off through a resist releasing liquid, and thus a light emitting element is obtained. |
