| 摘要 |
PURPOSE:To prevent read error from being generated by the existence of a defective memory cell by providing a precharge voltage generating means and plural interrupting means to selectively interrupt connection with each bit line. CONSTITUTION:When a fault is generated in one memory cell out of the memory cells connected to four paired bit lines to be selected by a column decoder 40, a fuse 44 in the column decoder 40 is interrupted. Therefore, since the column decoder 40 outputs signals Y1 and Y2 at a high level, a transistor 15 or 22 is turned off and moreover, a fuse 25 is disconnected as well. As a result, the connection between the bit line, to which the defective memory cell is connected, and a precharge voltage generating circuit 6 is physically interrupted. Thus, the read error can be prevented from being generated by the existence of the defective memory cell. |
