| 摘要 |
<p>PURPOSE:To make it possible to process accuracy in a cut face in a micron order against a standard pattern by performing finishing of the cut face with a highly rigid grindstone and cutting in a block shape while accuracy of the standard pattern on a wafer is kept. CONSTITUTION:The first line of an element pattern of a wafer 1 is measured by means of a microscopic system and positional adjustment using this as a standard is performed by rotating an XYtheta table 7 in such a way that the main axis and a standard element pattern are vertically crossed. Then, faces of unnecessary parts 2 of the front of the first line of the standard element pattern and both sides thereof are cut by using a cutting grindstone 4 for cutting wafer vertically to the first line of the standard element pattern to remove the unnecessary parts. Then, positioning of the wafer 1 is done by means of the microscopic system 3 and the XYtheta table 7 and surface finishing of the front cut face of the first line of the standard element pattern is performed by a grindstone 5 for surface finishing in such a way that curves and strain generated by cutting are corrected. A cut face which is parallel to the standard pattern is thereby formed.</p> |
