发明名称 DYNAMIC TYPE SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To shorten time from the start of a sense operation to the external output of data by executing the amplification of potential difference between bit lines, the output of the amplified potential difference from a sense amplifier to a data line and the restorage of the bit line in this order after receiving a start signal by a timing generation circuit. CONSTITUTION:Based on the timing of control signals (a)-(c) to be determined by the constitution of a timing generation circuit 1, the amplification of the potential difference between bit lines 7, the output of the amplified potential difference from a sense amplifier 3 to a data line 5 and the restorage of the bit line 7 is executed in this order. In such a case, since the sense amplifier 2 is connected to the data line 5 when starting the restorage of the bit line 7, the period from the start of the sense operation to the output of the data to the data line 5 can be limited only in the operation time for amplifying the potential difference of the bit line 7 by a pull-down transistor. Thus, the time until the output of the data to the external part can be shortened.
申请公布号 JPH03245396(A) 申请公布日期 1991.10.31
申请号 JP19900043753 申请日期 1990.02.22
申请人 SHARP CORP 发明人 IHARA MAKOTO
分类号 G11C11/409;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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