发明名称 VERY HIGH DENSITY WAFER SCALE DEVICE ARCHITECTURE
摘要 This invention relates to the design and manufacture of a wafer-size integrated circuit. Lower layers of the wafer sized integrated circuit comprise electrically isolated repeating blocks such as logic elements or blocks of circuit elements. An upper conductive layer comprises data and address bus structures. A discretionary via layer located between the upper layer and the lower layers can be patterned to accomplish multiple purposes. Patterning of the via layer avoids connecting the bus structure to defective elements or blocks, establishes addresses of elements, and establishes the organization of the addressing structure and data structure (for a memory wafer the word length, number of banks of words, and number of words per bank). The via layer is patterned to connect the upper bus lines to selected regions in the lower metal levels after testing (testing uses conventional techniques) for good and bad elements.
申请公布号 AU7690291(A) 申请公布日期 1991.10.30
申请号 AU19910076902 申请日期 1991.03.26
申请人 TACTICAL FABS, INC. 发明人 JAMES W. HIVELY;MAMMEN THOMAS;RICHARD L. BECHTEL
分类号 G01R31/317;G11C5/02;G11C11/401;G11C29/00;G11C29/04;H01L21/66;H01L21/82;H01L21/8242;H01L27/02;H01L27/10;H01L27/108 主分类号 G01R31/317
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