| 摘要 |
In order to reduce the effect of the stray capacitance associated with a contact pad formed on an insulating layer 15 of an integrated circuit a region 20 of opposite conductivity type to the surrounding epitaxial region 16 is formed immediately below the contact pad 11. This region 20 floats electrically and the capacitance C22 associated with the junction appears in series with that (C101) between the pad 11, (12) and the semiconductor. The pad 11 may be connected by the track 12 to an input protection circuit including a diffused resistor 23. The floating zone 20 may be produced at the same time as resistor 23. <IMAGE> |
