| 摘要 |
PURPOSE:To accurately measure input and output high-frequency characteristics of a semiconductor element required to accurately design a matching circuit by providing a semiconductor element which has an input part, lines having the same form with the transmission line of the matching circuit, and patterns for bringing probes into contact with the other end of the line. CONSTITUTION:The semiconductor device 2 has an auxiliary pattern 3, the semiconductor element 4, the lines 5 and 6, and the patterns 7 and 8 for bringing the probes into contact on a wafer 1. The probe P is connected to the pattern 7 and the probe (of substantially the same constitution with the probe P) is connected to the pattern 8; and the input and output impedance values of the element 4 can be measured in consideration of the high frequency characteristics of the lines 5 and 6 and patterns 7 and 8. The element 4 is equipped with an input part 10 having a gate electrode G, a ground part 11 having a source electrode S, and an output part 12 having a drain electrode D. The lines 5 and 6 are dummy lines consisting of the same matrix strip lines with the transmission form of the matching circuit which is connected to the element later. |
