发明名称 FLATTENING METHOD FOR BERYLLIUM THIN FILM
摘要 <p>PURPOSE:To form a flat surface adapted to be used for an X-ray lithography by etching a laminate made of a combination of a beryllium thin film and other material to cut out the surface of the smooth film from other material layer. CONSTITUTION:A beryllium film 2 is formed 12mum on a copper board 1 which is so polished that its surface roughness is 100Angstrom or less by EB depositing. Then, the film 2 is coated with a novolac resin resist (AZ-1375) 3 by spin coating, so formed about 4mum as to flatten its surface, baked at 150 deg.C, and then set in a chamber of an ion milling apparatus. Then, it is etched by ion milling 4 under the conditions of 400eV of ion energy, 0.6mA/cm<2> of ion current and 73 deg. of incident angle. When the surface roughness of the film 2 etched for about 90 min was measured, it was 800Angstrom , and the thickness of the film 2 was about 10.2mum. Then, the board 1 is dissolved in aqueous ferric chloride solution to obtain a beryllium film 2'. Thus, no irregularity in thickness is obtained, and an X-ray exposure without irregular exposure is obtained.</p>
申请公布号 JPH03244115(A) 申请公布日期 1991.10.30
申请号 JP19900039667 申请日期 1990.02.22
申请人 CANON INC 发明人 IKEDA TSUTOMU
分类号 C23F4/00;G03F1/00;G03F7/20;H01L21/027;H01L21/30 主分类号 C23F4/00
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