Dynamic random access memory device with improved power supply system for speed-up of rewriting operation on data bits read-out from memory cells.

摘要

A random access memory device comprises a plurality of memory cells (42a/42b) arranged in matrix and sense amplifier circuits (44a/44b) for data bits read-out from a row of the memory cells, and the sense amplifier circuits are associated with sense amplifier driving circuits (52a to 52d) selectively incorporated in a first controlling unit (53) provided in association with row address bits for supporting propagation of the data bits and a second controlling unit (54) provided in association with column address bits for supporting propagation of one of the data bits to an input-and-output data buffer unit (46), wherein the first and second controlling units are coupled in parallel between a bonding pad (56) supplied with a power voltage and another bonding pad (57) supplied with a ground voltage so that the sense amplifier circuits achieve differential amplification at an improved speed. <IMAGE>