发明名称 |
Method of producing SOI structures |
摘要 |
A method of producing so-called SOI structures according to this invention includes the step of forming an opening for seeding after an insulating layer of predetermined thickness has been formed on a first monocrystal silicon layer. Further, a non-monocrystal layer, e.g., a polycrystal silicon layer is formed on the surface of the insulating layer. The surface of the polycrystal silicon layer is smoothed as by grinding. A reflection-preventive film is formed on the smoothed surface of the polycrystal silicon layer. The reflection-preventive film has a thin film region whose reflectance is substantially zero and a thick film region having a predetermined reflectance. During laser annealing, the reflection-preventive film produces a predetermined temperature distribution in the polycrystal silicon layer. The polycrystal silicon layer which has melted according to this temperature distribution recrystallizes from adjacent the seed portion and thereby forms a new monocrystal silicon layer over the entire surface. The smoothing process for the polycrystal silicon layer prevents any change in the reflectance of the reflection-preventive film and improves control on the temperature distribution in the polycrystal silicon layer.
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申请公布号 |
US5061655(A) |
申请公布日期 |
1991.10.29 |
申请号 |
US19910653086 |
申请日期 |
1991.02.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
IPPOSHI, TAKASHI;SUGAHARA, KOZUYUKI |
分类号 |
H01L21/20;H01L21/263;H01L21/321;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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