| 摘要 |
Semiconductor device. The invention relates to a CCD having a so-called diode cut-off input, in which the input diode is applied to a reference voltage and the input signal is supplied to the input gate located in front of the first clock electrode. More particularly if the electrodes are composed of a transfer part and a storage part with incorporated potential difference, it is possible that, when charge is transported from the input gate to the first clock electrode, a large amount of charge is left behind. In order to avoid this and/or to be able to enlarge the dynamic range of the input signal, a MOST switch controlled by the same clock voltage as the first clock electrode is arranged between the input gate and a reference voltage, for example earth. This switch becomes conducting when the charge is transferred, as a result of which the potential level below the input gate can be adjusted above the surface potential below the transfer part of the first clock electrode. Fig.3. |
