发明名称 |
Field effect transistor with lightly doped drain structure and method for manufacturing the same |
摘要 |
A semiconductor integrated circuit device is disclosed which has an MOSFET with a lightly doped drain or LLD structure. A gate electrode layer is insulatively provided above a semiconductor substrate of p conductivity type. Source and drain layers of n conductivity type are formed in the substrate in such a manner as to be substantially self-aligned with the gate electrode. Each of these source and drain layers is comprised of a heavily doped diffusion layer and a lightly doped diffusion layer. The n- diffusion layer is deep enough to fully surround the heavily doped layer in the substrate. The n- diffusion layer has a step-like cross-section, whereby the effective channel length of MOSFET is increased inside the substrate to increase the punch-through voltage level.
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申请公布号 |
US5061649(A) |
申请公布日期 |
1991.10.29 |
申请号 |
US19870029954 |
申请日期 |
1987.03.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKENOUCHI, NAOKO;HIEDA, KATSUHIKO |
分类号 |
H01L21/8234;H01L21/336;H01L27/088;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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